Ultra High Frequency Transistor Array. Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device

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             HFA3127/883

February 1995                                               Ultra High Frequency Transistor Array

Features                                                       Description

•  This Circuit is Processed in Accordance to MIL-STD- The HFA3127/883 is an Ultra High Frequency Transistor 883 and is Fully Conformant Under the Provisions of Array fabricated on the Harris Semiconductor complemenParagraph 1.2.1. tary bipolar UHF-1 process. This array consists of five dielectrically isolated transistors on a common monolithic

•  NPN Transistor (fT). . . . . . . . . . . . . . . . . . . . .8GHz (Typ)     substrate. The high fT (8GHz) and low noise figure (3.5dB)

•  NPN Current Gain . . . . . . . . . . . . . . . . . . . . . . . 40 (Min)      of these transistors make them ideal for high frequency amplifier and mixer applications.

•  NPN Early Voltage (VA) . . . . . . . . . . . . . . . . . . . 20 (Min)

The HFA3127/883 is an all-NPN array. Access is provided to

•  Noise Figure (50) at 1.0GHz . . . . . . . . . . . 3.5dB (Typ)     each of the terminals of the individual transistors for maxi•  Collector-to-Collector Leakage. . . . . . . . . . .<1pA (Typ) mum application flexibility. The monolithic construction of the array provides close electrical and thermal matching of the

•  Complete Isolation Between Transistors               five transistors.

•  Pin Compatible with Industry Standard 3XXX Series         SMD 5962-9474901MEA version is also available from Harris

Semiconductor.

Applications

•  VHF/UHF Amplifiers      Ordering Information

PART NUMBER

TEMPERATURE

PACKAGE

HFA3127MJ/883

-55oC to +125oC

16 Lead CerDIP

•  VHF/UHF Mixers

•  IF Converters

•  Synchronous Detectors

Pinout

HFA3127/883

(CERDIP)

TOP VIEW

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures.   File Number 3967

Copyright © Harris Corporation 1995

Spec Number 511120

Specifications HFA3127/883

Absolute Maximum Ratings                                        Thermal Information

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .8.0V       Thermal Resistance                                      θJA                   θJC

Collector to Base Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12.0V                CerDIP Package . . . . . . . . . . . . . . . . . . . 80oC/W        24oC/W

Emitter to Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5.5V      Maximum Package Power Dissipation at +75 o

Collector Current at 100% Duty Cycle, 175oC TJ. . . . . . . . . 11.3mA      CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25W Storage Temperature Range . . . . . . . . . . . . . . . . . . -65oC to 150oC      Derating Factor Above +75oC

Junction Temperature (DIE) . . . . . . . . . . . . . . . . . . . . . . . . . +175oC           CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12.5mW/oC

Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300oC

ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Operating Conditions

Operating Temperature Range. . . . . . . . . . . . . . . . -55oC to +125oC

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER

SYMBOL

CONDITIONS

GROUP A SUBGROUPS

TEMPERATURE

LIMITS

UNITS

MIN

MAX

Collector-to-Base

Breakdown Voltage

V(BR)CBO

IC = 100µA, IE = 0

1

+25oC

12

-

V

2, 3

+125oC to -55oC

12

-

V

Collector-to-Emitter

Breakdown Voltage

V(BR)CEO

IC = 100µA, IB = 0

1

+25oC

8

-

V

2, 3

+125oC to -55oC

8

-

V

Collector-to-Emitter

Breakdown Voltage

V(BR)CES

IC = 100µA, Base Shorted tp Emitter

1

+25oC

10

-

V

2, 3

+125oC to -55oC

10

-

V

Emitter-to-Base Breakdown

Voltage

V(BR)EBO

IE = 10µA, IC = 0

1

+25oC

5.5

-

V

2, 3

+125oC to -55oC

5.5

-

V

Collector-Cutoff Current

ICEO

VCE = 6V, IB = 0

1

+25oC

-

100

nA

2, 3

+125oC to -55oC

-

100

nA

Collector-Cutoff Current

ICBO

VCB = 8V, IE = 0

1

+25oC

-

10

nA

2, 3

+125oC to -55oC

-

10

nA

Collector-to-Emitter

Saturation Voltage

VCE(SAT)

IC = 10mA, IB = 1mA

1

+25oC

-

0.5

V

2, 3

+125oC to -55oC

-

0.5

V

Base-to-Emitter Voltage

VBE

IC = 10mA

1

+25oC

-

0.95

V

2, 3

+125oC to -55oC

-

1.05

V

DC Forward Current

Transfer Ratio

hFE

IC = 10mA, VCE = 2V

1

+25oC

40

-

-

2, 3

+125oC to -55oC

20

-

-

Early Voltage

VA

IC = 10mA, VCE = 3.5V

1

+25oC

20

-

V

2, 3

+125oC to -55oC

20

-

V

Specifications HFA3127/883

TABLE 2. ELECTRICAL PERFORMANCE CHARACTERISTICS

Table 2 Intentionally Left Blank.

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

Table 3 Intentionally Left Blank.

TABLE 4. ELECTRICAL TEST REQUIREMENTS

MIL-STD-883 TEST REQUIREMENTS

SUBGROUPS (SEE TABLE 1)

Interim Electrical Parameters (Pre Burn-In)

1

Final Electrical Test Parameters

1 (Note 1), 2, 3

Group A Test Requirements

1, 2, 3

Groups C and D Endpoints

1

NOTE:

1. PDA applies to Subgroup 1 only.

      HFA3127

DESIGN INFORMATION

February 1995                                               Ultra High Frequency Transistor Array

HFA3127

Ceramic Dual-In-Line Frit Seal Packages (CerDIP)

SYMBOL

INCHES

MILLIMETERS

NOTES

MIN

MAX

MIN

MAX

A

-

0.200

-

5.08

-

b

0.014

0.026

0.36

0.66

2

b1

0.014

0.023

0.36

0.58

3

b2

0.045

0.065

1.14

1.65

-

b3

0.023

0.045

0.58

1.14

4

c

0.008

0.018

0.20

0.46

2

c1

0.008

0.015

0.20

0.38

3

D

-

0.840

-

21.34

5

E

0.220

0.310

5.59

7.87

5

e

0.100 BSC

2.54 BSC

-

eA

0.300 BSC

7.62 BSC

-

eA/2

0.150 BSC

3.81 BSC

-

L

0.125

0.200

3.18

5.08

-

Q

0.015

0.060

0.38

1.52

6

S1

0.005

-

0.13

-

7

α

90o

105o

90o

105o

-

aaa

-

0.015

-

0.38

-

bbb

-

0.030

-

0.76

-

ccc

-

0.010

-

0.25

-

M

-

0.0015

-

0.038

2, 3

N

16

16

8

c1 LEAD FINISH               F16.3 MIL-STD-1835 GDIP1-T16 (D-2, CONFIGURATION A) 16 LEAD CERAMIC DUAL-IN-LINE FRIT SEAL PACKAGE

1.  Index area: A notch or a pin one identification mark shall be located adjacent to pin one and shall be located within the shaded area shown. The manufacturer’s identification shall not be used as a pin one identification mark.

2.  The maximum limits of lead dimensions b and c or M shall bemeasured at the centroid of the finished lead surfaces, when solder dip or tin plate lead finish is applied.

3.  Dimensions b1 and c1 apply to lead base metal only. DimensionM applies to lead plating and finish thickness.

4.  Corner leads (1, N, N/2, and N/2+1) may be configured with a partial lead paddle. For this configuration dimension b3 replaces

dimension b2.                                                                                                                                                                  Rev. 0 4/94

5.  This dimension allows for off-center lid, meniscus, and glassoverrun.

6.  Dimension Q shall be measured from the seating plane to thebase plane.

7.  Measure dimension S1 at all four corners.

8.  N is the maximum number of terminal positions.

9.  Dimensioning and tolerancing per ANSI Y14.5M - 1982.

10.  Controlling dimension: INCH.

Harris Semiconductor products are sold by description only. Harris Semiconductor reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Harris is believed to be accurate and reliable. However, no responsibility is assumed by Harris or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Harris or its subsidiaries.

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For general information regarding Harris Semiconductor and its products, call 1-800-4-HARRIS

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