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Ultra High Frequency Transistor Array. Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device

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HFA3127/883

February 1995 Ultra High Frequency Transistor Array

Features Description

• This Circuit is Processed in Accordance to MIL-STD- The HFA3127/883 is an Ultra High Frequency Transistor 883 and is Fully Conformant Under the Provisions of Array fabricated on the Harris Semiconductor complemenParagraph 1.2.1. tary bipolar UHF-1 process. This array consists of five dielectrically isolated transistors on a common monolithic

• NPN Transistor (fT). . . . . . . . . . . . . . . . . . . . .8GHz (Typ) substrate. The high f_T (8GHz) and low noise figure (3.5dB)

• NPN Current Gain . . . . . . . . . . . . . . . . . . . . . . . 40 (Min) of these transistors make them ideal for high frequency amplifier and mixer applications.

• NPN Early Voltage (VA) . . . . . . . . . . . . . . . . . . . 20 (Min)

The HFA3127/883 is an all-NPN array. Access is provided to

• Noise Figure (50Ω) at 1.0GHz . . . . . . . . . . . 3.5dB (Typ) each of the terminals of the individual transistors for maxi• Collector-to-Collector Leakage. . . . . . . . . . .<1pA (Typ) mum application flexibility. The monolithic construction of the array provides close electrical and thermal matching of the

• Complete Isolation Between Transistors five transistors.

• ^{Pin
Compatible with Industry Standard 3XXX Series}SMD 5962-9474901MEA version is also available from Harris

Semiconductor.

Applications

• VHF/UHF Amplifiers Ordering Information

PART NUMBER	TEMPERATURE	PACKAGE
HFA3127MJ/883	-55^oC to +125^oC	16 Lead CerDIP

• VHF/UHF Mixers

• IF Converters

• Synchronous Detectors

Pinout

HFA3127/883

(CERDIP)

TOP VIEW

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures. File Number 3967

Spec Number 511120

Specifications HFA3127/883

Absolute Maximum Ratings Thermal Information

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .8.0V Thermal Resistance θ_JAθ_JC

Collector to Base Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12.0V CerDIP Package . . . . . . . . . . . . . . . . . . . 80^oC/W 24^oC/W

Emitter to Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5.5V Maximum Package Power Dissipation at +75 ^o

Collector Current at 100% Duty Cycle, 175^oC T_J. . . . . . . . . 11.3mA CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25W Storage Temperature Range . . . . . . . . . . . . . . . . . . -65^oC to 150^oC Derating Factor Above +75^oC

Junction Temperature (DIE) . . . . . . . . . . . . . . . . . . . . . . . . . +175^oC CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12.5mW/^oC

Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300^oC

ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Operating Conditions

Operating Temperature Range. . . . . . . . . . . . . . . . -55^oC to +125^oC

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER	SYMBOL	CONDITIONS	GROUP A SUBGROUPS	TEMPERATURE	LIMITS		UNITS
PARAMETER	SYMBOL	CONDITIONS	GROUP A SUBGROUPS	TEMPERATURE	MIN	MAX	UNITS
Collector-to-Base Breakdown Voltage	V(BR)CBO	I_C = 100µA, I_E = 0	1	+25^oC	12	-	V
Collector-to-Base Breakdown Voltage	V(BR)CBO	I_C = 100µA, I_E = 0	2, 3	+125^oC to -55^oC	12	-	V
Collector-to-Emitter Breakdown Voltage	V(BR)CEO	I_C = 100µA, I_B = 0	1	+25^oC	8	-	V
Collector-to-Emitter Breakdown Voltage	V(BR)CEO	I_C = 100µA, I_B = 0	2, 3	+125^oC to -55^oC	8	-	V
Collector-to-Emitter Breakdown Voltage	V(BR)CES	I_C = 100µA, Base Shorted tp Emitter	1	+25^oC	10	-	V
Collector-to-Emitter Breakdown Voltage	V(BR)CES	I_C = 100µA, Base Shorted tp Emitter	2, 3	+125^oC to -55^oC	10	-	V
Emitter-to-Base Breakdown Voltage	V(BR)EBO	I_E = 10µA, I_C = 0	1	+25^oC	5.5	-	V
Emitter-to-Base Breakdown Voltage	V(BR)EBO	I_E = 10µA, I_C = 0	2, 3	+125^oC to -55^oC	5.5	-	V
Collector-Cutoff Current	ICEO	V_CE = 6V, I_B = 0	1	+25^oC	-	100	nA
Collector-Cutoff Current	ICEO	V_CE = 6V, I_B = 0	2, 3	+125^oC to -55^oC	-	100	nA
Collector-Cutoff Current	ICBO	V_CB= 8V, I_E = 0	1	+25^oC	-	10	nA
Collector-Cutoff Current	ICBO	V_CB= 8V, I_E = 0	2, 3	+125^oC to -55^oC	-	10	nA
Collector-to-Emitter Saturation Voltage	VCE(SAT)	I_C = 10mA, I_B = 1mA	1	+25^oC	-	0.5	V
Collector-to-Emitter Saturation Voltage	VCE(SAT)	I_C = 10mA, I_B = 1mA	2, 3	+125^oC to -55^oC	-	0.5	V
Base-to-Emitter Voltage	VBE	I_C = 10mA	1	+25^oC	-	0.95	V
Base-to-Emitter Voltage	VBE	I_C = 10mA	2, 3	+125^oC to -55^oC	-	1.05	V
DC Forward Current Transfer Ratio	hFE	I_C = 10mA, V_CE = 2V	1	+25^oC	40	-	-
DC Forward Current Transfer Ratio	hFE	I_C = 10mA, V_CE = 2V	2, 3	+125^oC to -55^oC	20	-	-
Early Voltage	V_A	I_C = 10mA, V_CE = 3.5V	1	+25^oC	20	-	V
Early Voltage	V_A	I_C = 10mA, V_CE = 3.5V	2, 3	+125^oC to -55^oC	20	-	V

Specifications HFA3127/883

TABLE 2. ELECTRICAL PERFORMANCE CHARACTERISTICS

Table 2 Intentionally Left Blank.

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

Table 3 Intentionally Left Blank.

TABLE 4. ELECTRICAL TEST REQUIREMENTS

MIL-STD-883 TEST REQUIREMENTS	SUBGROUPS (SEE TABLE 1)
Interim Electrical Parameters (Pre Burn-In)	1
Final Electrical Test Parameters	1 (Note 1), 2, 3
Group A Test Requirements	1, 2, 3
Groups C and D Endpoints	1

NOTE:

1. PDA applies to Subgroup 1 only.

HFA3127

DESIGN INFORMATION

February 1995 Ultra High Frequency Transistor Array

HFA3127

Ceramic Dual-In-Line Frit Seal Packages (CerDIP)

SYMBOL	INCHES		MILLIMETERS		NOTES
SYMBOL	MIN	MAX	MIN	MAX	NOTES
A	-	0.200	-	5.08	-
b	0.014	0.026	0.36	0.66	2
b1	0.014	0.023	0.36	0.58	3
b2	0.045	0.065	1.14	1.65	-
b3	0.023	0.045	0.58	1.14	4
c	0.008	0.018	0.20	0.46	2
c1	0.008	0.015	0.20	0.38	3
D	-	0.840	-	21.34	5
E	0.220	0.310	5.59	7.87	5
e	0.100 BSC		2.54 BSC		-
eA	0.300 BSC		7.62 BSC		-
eA/2	0.150 BSC		3.81 BSC		-
L	0.125	0.200	3.18	5.08	-
Q	0.015	0.060	0.38	1.52	6
S1	0.005	-	0.13	-	7
α	90^o	105^o	90^o	105^o	-
aaa	-	0.015	-	0.38	-
bbb	-	0.030	-	0.76	-
ccc	-	0.010	-	0.25	-
M	-	0.0015	-	0.038	2, 3
N	16		16		8

c1 LEAD FINISH F16.3 MIL-STD-1835 GDIP1-T16 (D-2, CONFIGURATION A) 16 LEAD CERAMIC DUAL-IN-LINE FRIT SEAL PACKAGE

1. Index area: A notch or a pin one identification mark shall be located adjacent to pin one and shall be located within the shaded area shown. The manufacturer’s identification shall not be used as a pin one identification mark.

2. The maximum limits of lead dimensions b and c or M shall bemeasured at the centroid of the finished lead surfaces, when solder dip or tin plate lead finish is applied.

3. Dimensions b1 and c1 apply to lead base metal only. DimensionM applies to lead plating and finish thickness.

4. Corner leads (1, N, N/2, and N/2+1) may be configured with a partial lead paddle. For this configuration dimension b3 replaces

dimension b2. ^{Rev.
0 4/94}

5. This dimension allows for off-center lid, meniscus, and glassoverrun.

6. Dimension Q shall be measured from the seating plane to thebase plane.

7. Measure dimension S1 at all four corners.

8. N is the maximum number of terminal positions.

9. Dimensioning and tolerancing per ANSI Y14.5M - 1982.

10. Controlling dimension: INCH.

Harris Semiconductor products are sold by description only. Harris Semiconductor reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Harris is believed to be accurate and reliable. However, no responsibility is assumed by Harris or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Harris or its subsidiaries.

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