Limiting values in accordance with the Absolute Maximum System (IEC 134). Glass passivated triacs in a full pack plastic envelope, intended for use in applications requiring high

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Philips Semiconductors

Product specification

 Triacs

BT136F series

GENERAL DESCRIPTION

QUICK REFERENCE DATA

SYMBOL

PARAMETER

BT136F-

MAX.

500

MAX.

600

MAX.

800

UNIT

BT136F-

500F

600F

800F

BT136F-

500G

600G

800G

VDRM

Repetitive peak off-state voltages

500

600

800

V

IT(RMS)

RMS on-state current

4

4

4

A

ITSM

Non-repetitive peak on-state current

25

25

25

A

Glass passivated triacs in a full pack plastic envelope, intended for use in applications requiring           high bidirectional transient and blocking voltage capability and high thermal cycling performance.    Typical applications include motor control, industrial        and domestic          lighting, heating and static switching.

PINNING - SOT186

PIN CONFIGURATION

SYMBOL

 

PIN

DESCRIPTION

1

main terminal 1

2

main terminal 2

3

gate

case

isolated

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

-500

-600

-800

VDRM

Repetitive peak off-state

-

500[1]

6001

800

V

IT(RMS)

voltages

RMS on-state current

full sine wave; Ths ≤ 92 ˚C

-

A

4

ITSM

Non-repetitive peak

full sine wave; Tj = 125 ˚C prior

on-state current

to surge; with reapplied VDRM(max) t = 20 ms

-

25

A

t = 16.7 ms

-

27

A

I2t

I2t for fusing

t = 10 ms

-

3.1

A2s

dIT/dt

Repetitive rate of rise of

ITM = 6 A; IG = 0.2 A;

on-state current after

dIG/dt = 0.2 A/µs

triggering

T2+ G+

-

50

A/µs

T2+ G-

-

50

A/µs

T2- G-

-

50

A/µs

T2- G+

-

10

A/µs

IGM

Peak gate current

-

2

A

VGM

Peak gate voltage

-

5

V

PGM

Peak gate power

-

5

W

PG(AV)

Average gate power

over any 20 ms period

-

0.5

W

Tstg

Storage temperature

-40

150

˚C

Tj

Operating junction temperature

-

125

˚C

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Visol

Repetitive peak voltage from all three terminals to external heatsink

R.H. ≤ 65% ; clean and dustfree

-

1500

V

Cisol

Capacitance from T2 to external heatsink

f = 1 MHz

-

12

-

pF

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Rth j-hs

Thermal resistance

full or half cycle

junction to heatsink

with heatsink compound

-

-

5.5

K/W

without heatsink compound

-

-

7.2

K/W

Rth j-a

Thermal resistance junction to ambient

in free air

-

55

-

K/W

STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

BT136F-

...

...F

...G

IGT

Gate trigger current

VD = 12 V; IT = 0.1 A T2+ G+

-

5

35

25

50

mA

T2+ G-

-

8

35

25

50

mA

T2- G-

-

11

35

25

50

mA

T2- G+

-

30

70

70

100

mA

IL

Latching current

VD = 12 V; IGT = 0.1 A

T2+ G+

-

7

20

20

30

mA

T2+ G-

-

16

30

30

45

mA

T2- G-

-

5

20

20

30

mA

T2- G+

-

7

30

30

45

mA

IH

VT

Holding current

On-state voltage

VD = 12 V; IGT = 0.1 A

IT = 5 A

-

-

5 1.4

15

15

30

mA

V

1.70

VGT

Gate trigger voltage

VD = 12 V; IT = 0.1 A

-

0.7

1.5

V

VD = 400 V; IT = 0.1 A; Tj = 125 ˚C

0.25

0.4

-

V

ID

Off-state leakage current

VD = VDRM(max); Tj = 125 ˚C

-

0.1

0.5

mA

DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

BT136F-

...

...F

...G

dVD/dt

Critical rate of rise of

VDM = 67% VDRM(max)V;

100

50

200

250

-

V/µs

off-state voltage

Tj = 125 ˚C; exponential

waveform; gate open

circuit

dVcom/dt

Critical rate of change of

VDM = 400 V; Tj = 95 ˚C;

-

-

10

50

-

V/µs

commutating voltage

IT(RMS) = 4 A; dIcom/dt = 1.8 A/ms; gate open circuit

tgt

Gate controlled turn-on

ITM = 6 A; VD = VDRM(max);

-

-

-

2

-

µs

time

IG = 0.1 A; dIG/dt = 5 A/µs


0  1                  2                  3                  4                  5

IT(RMS) / A

Fig.1.  Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where α = conduction angle.

Fig.2.   Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 20ms.

1  10                100              1000 Number of cycles at 50Hz

Fig.3.   Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for


Fig.4.  Maximum permissible rms current IT(RMS) , versus heatsink temperature Ths.


surge duration / s                                                                                                                                 Tj / C

Fig.5.   Maximum permissible repetitive rms on-state       Fig.8.   Normalised latching current IL(Tj)/ IL(25˚C), current IT(RMS), versus surge duration, for sinusoidal          versus junction temperature Tj. currents, f = 50 Hz; T ≤ 92˚C.


              Fig.6.  Normalised gate trigger voltage                             versus junction temperature Tj.

VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.

IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.


Fig.11.  Transient thermal impedance Zth j-hs, versus pulse

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