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Limiting values in accordance with the Absolute Maximum System (IEC 134). Glass passivated triacs in a full pack plastic envelope, intended for use in applications requiring high

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Philips Semiconductors		Product specification
Triacs		BT136F series
GENERAL DESCRIPTION	QUICK REFERENCE DATA

SYMBOL	PARAMETER BT136F-	MAX. 500	MAX. 600	MAX. 800	UNIT
	PARAMETER BT136F-	MAX. 500	MAX. 600	MAX. 800	UNIT
	BT136F-	500F	600F	800F
	BT136F-	500G	600G	800G
V_DRM	Repetitive peak off-state voltages	500	600	800	V
IT(RMS)	RMS on-state current	4	4	4	A
ITSM	Non-repetitive peak on-state current	25	25	25	A

Glass passivated triacs in a full pack plastic envelope, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching.

PINNING - SOT186

PIN CONFIGURATION

SYMBOL

PIN	DESCRIPTION
1	main terminal 1
2	main terminal 2
3	gate
case	isolated

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL	PARAMETER	CONDITIONS	MIN.		MAX.		UNIT
				-500	-600	-800
V_DRM	Repetitive peak off-state		-	500^{^[1]}	600¹	800	V
IT(RMS)	voltages RMS on-state current	full sine wave; T_hs ≤ 92 ˚C	-				A
IT(RMS)	voltages RMS on-state current	full sine wave; T_hs ≤ 92 ˚C	-		4		A
ITSM	Non-repetitive peak	full sine wave; T_j = 125 ˚C prior
	on-state current	to surge; with reapplied V_DRM(max)t = 20 ms	-		25		A
		t = 16.7 ms	-		27		A
I²t	I²t for fusing	t = 10 ms	-		3.1		A²s
dI_T/dt	Repetitive rate of rise of	I_TM = 6 A; I_G = 0.2 A;
	on-state current after	dI_G/dt = 0.2 A/µs
	triggering	T2+ G+	-		50		A/µs
		T2+ G-	-		50		A/µs
		T2- G-	-		50		A/µs
		T2- G+	-		10		A/µs
IGM	Peak gate current		-		2		A
V_GM	Peak gate voltage		-		5		V
P_GM	Peak gate power		-		5		W
PG(AV)	Average gate power	over any 20 ms period	-		0.5		W
T_stg	Storage temperature		-40		150		˚C
T_j	Operating junction temperature		-		125		˚C

ISOLATION LIMITING VALUE & CHARACTERISTIC

T_hs = 25 ˚C unless otherwise specified

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
V_isol	Repetitive peak voltage from all three terminals to external heatsink	R.H. ≤ 65% ; clean and dustfree	-		1500	V
C_isol	Capacitance from T2 to external heatsink	f = 1 MHz	-	12	-	pF

THERMAL RESISTANCES

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
Rth j-hs	Thermal resistance	full or half cycle
	junction to heatsink	with heatsink compound	-	-	5.5	K/W
		without heatsink compound	-	-	7.2	K/W
R_{th j-a}	Thermal resistance junction to ambient	in free air	-	55	-	K/W

STATIC CHARACTERISTICS

T_j = 25 ˚C unless otherwise stated

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.		MAX.		UNIT
		BT136F-			...	...F	...G
IGT	Gate trigger current	V_D = 12 V; I_T = 0.1 A T2+ G+	-	5	35	25	50	mA
		T2+ G-	-	8	35	25	50	mA
		T2- G-	-	11	35	25	50	mA
		T2- G+	-	30	70	70	100	mA
I_L	Latching current	V_D = 12 V; I_GT = 0.1 A T2+ G+	-	7	20	20	30	mA
		T2+ G-	-	16	30	30	45	mA
		T2- G-	-	5	20	20	30	mA
		T2- G+	-	7	30	30	45	mA
I_H V_T	Holding current On-state voltage	V_D = 12 V; I_GT = 0.1 A I_T = 5 A	- -	5 1.4	15	15	30	mA V
I_H V_T	Holding current On-state voltage	V_D = 12 V; I_GT = 0.1 A I_T = 5 A	- -	5 1.4		1.70		mA V
V_GT	Gate trigger voltage	V_D = 12 V; I_T = 0.1 A	-	0.7		1.5		V
		V_D = 400 V; I_T = 0.1 A; T_j = 125 ˚C	0.25	0.4		-		V
I_D	Off-state leakage current	VD = VDRM(max); T_j = 125 ˚C	-	0.1		0.5		mA

DYNAMIC CHARACTERISTICS

T_j = 25 ˚C unless otherwise stated

SYMBOL	PARAMETER	CONDITIONS		MIN.		TYP.	MAX.	UNIT
		BT136F-	...	...F	...G
dV_D/dt	Critical rate of rise of	VDM = 67% VDRM(max)V;	100	50	200	250	-	V/µs
	off-state voltage	T_j = 125 ˚C; exponential waveform; gate open circuit
dV_com/dt	Critical rate of change of	V_DM = 400 V; T_j = 95 ˚C;	-	-	10	50	-	V/µs
	commutating voltage	I_T(RMS) = 4 A; dI_com/dt = 1.8 A/ms; gate open circuit
t_gt	Gate controlled turn-on	ITM = 6 A; VD = VDRM(max);	-	-	-	2	-	µs
	time	I_G = 0.1 A; dI_G/dt = 5 A/µs

0 1 2 3 4 5

IT(RMS) / A

Fig.1. Maximum on-state dissipation, P_tot, versus rms on-state current, I_T(RMS), where α = conduction angle.

Fig.2. Maximum permissible non-repetitive peak on-state current I_TSM, versus pulse width t_p, for sinusoidal currents, t_p ≤ 20ms.

1 10 100 1000 Number of cycles at 50Hz

Fig.3. Maximum permissible non-repetitive peak on-state current I_TSM, versus number of cycles, for

Fig.4. Maximum permissible rms current I_T(RMS) , versus heatsink temperature T_hs.

surge duration / s Tj / C

Fig.5. Maximum permissible repetitive rms on-state Fig.8. Normalised latching current I_L(T_j)/ I_L(25˚C), current I_T(RMS), versus surge duration, for sinusoidal versus junction temperature T_j. currents, f = 50 Hz; T ≤ 92˚C.