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Ultra High Frequency Transistor Array. Complete Isolation Between Transistors. Pin Compatible with Industry Standard 3XXX Series

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HFA3046, HFA3096,

HFA3127, HFA3128

July 1995 Ultra High Frequency Transistor Array

Features Description

• NPN Transistor (f_T). . . . . . . . . . . . . . . . . . . . . . . . . 8GHz The HFA3046, HFA3096, HFA3127 and the HFA3128 are

Ultra High Frequency Transistor Arrays that are fabricated

• NPN Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . . 70 from Harris Semiconductor’s complementary bipolar UHF-1

• NPN Early Voltage (V_A) . . . . . . . . . . . . . . . . . . . . . . .50V process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN

• PNP Transistor (f_T). . . . . . . . . . . . . . . . . . . . . . . . 5.5GHz ^{transistors exhibit
a f}_T of 8GHz while the PNP transistors

• PNP Current Gain (h_FE) . . . . . . . . . . . . . . . . . . . . . . . . 40 provide a f_T of 5.5GHz. Both types exhibit low noise (3.5dB), making them ideal for high frequency amplifier and mixer • PNP Early Voltage (V_A) . . . . . . . . . . . . . . . . . . . . . . .25V applications.

• Noise Figure (50Ω) at 1.0GHz . . . . . . . . . . . . . . . . 3.5dB The HFA3046 and HFA3127 are all-NPN arrays while the

• Collector-to-Collector Leakage. . . . . . . . . . . . . . . .<1pA ^{HFA3128
has all PNP transistors. The HFA3096 is a NPN-}

PNP combination. Access is provided to each of the termi• Complete Isolation Between Transistors nals for the individual transistors for maximum application

• Pin Compatible with Industry Standard 3XXX Series flexibility. Monolithic construction of these transistor arrays Arrays provides close electrical and thermal matching of the five transistors. For PSPICE models, please request AnswerFAX document

^Applicationsnumber 663046. Harris also provides an Application Note

• VHF/UHF Amplifiers illustrating the use of these devices as RF amplifiers

(request AnswerFAX document 99315).

• VHF/UHF Mixers

• IF Converters Ordering Information

PART NUMBER	PACKAGE
HFA3046B	14 Lead Plastic SOIC (N)
HFA3096B, HFA3127B, HFA3128B	16 Lead Plastic SOIC (N)
HFA3046Y, HFA3096Y	Die
HFA3127Y, HFA3128Y	Die

• Synchronous Detectors

Pinouts

HFA3046 HFA3096 HFA3127 HFA3128

TOP VIEW TOP VIEW TOP VIEW TOP VIEW

NC 5 NC 5

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures. File Number 3076.6

Specifications HFA3046, HFA3096, HFA3127, HFA3128

Absolute Maximum Ratings

Thermal Information

Collector to Emitter Voltage (Open Base). . . . . . . . . . . . . . . . . .8.0V Collector to Base Voltage (Shorted Base) . . . . . . . . . . . . . . . 12.0V Emitter to Base Voltage (Reverse Bias). . . . . . . . . . . . . . . . . . 5.5V Collector Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15.5mA Storage Temperature Range . . . . . . . . . . . . . . . . . -65^oC to +150^oC Operating Temperature Range. . . . . . . . . . . . . . . . -55^oC to +125^oC Junction Temperature (Die) . . . . . . . . . . . . . . . . . . . . . . . . . +175^oC Junction Temperature (Plastic Package) . . . . . . . . . . . . . . . +150^oC

Lead Temperature (Soldering 10s) (Lead Tips Only. . . . . . . +300^oC

Thermal Resistance θ_JA

Plastic 14 Lead SOIC Package . . . . . . . . . . . . . . . . . . 120^oC/W

Plastic 16 Lead SOIC Package . . . . . . . . . . . . . . . . . . 115^oC/W

Maximum Package Power Dissipation at +75^oC

Plastic 14 Lead SOIC Package . . . . . . . . . . . . . . . . . . . . . . 0.63W

Plastic 16 Lead SOIC Package . . . . . . . . . . . . . . . . . . . . . . 0.66W

Any One Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.15W

Derating Factor Above +75^oC

Plastic 14 Lead SOIC Package . . . . . . . . . . . . . . . . . . .8.4mW/^oC

Plastic 16 Lead SOIC Package . . . . . . . . . . . . . . . . . . .8.7mW/^oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Static NPN Characteristics at T_A = +25^oC

PARAMETERS	TEST CONDITIONS		DIE			SOIC		UNITS
PARAMETERS	TEST CONDITIONS	MIN	TYP	MAX	MIN	TYP	MAX	UNITS
Collector-to-Base Breakdown Voltage, V₍BR)CBO	I_C = 100µA, I_E = 0	12	18	-	12	18	-	V
Collector-to-Emitter Breakdown Voltage, V₍BR)CEO	I_C = 100µA, I_B = 0	8	12	-	8	12	-	V
Collector-to-Emitter Breakdown Voltage, V₍BR)CES	I_C = 100µA, Base Shorted to Emitter	10	20	-	10	20	-	V
Emitter-to-Base Breakdown Voltage, V₍BR)EBO	I_E = 10µA, I_C = 0	5.5	6	-	5.5	6	-	V
Collector-Cutoff-Current, I_CEO	V_CE = 6V, I_B = 0	-	2	100	-	2	100	nA
Collector-Cutoff-Current, I_CBO	V_CB = 8V, I_E = 0	-	0.1	10	-	0.1	10	nA
Collector-to-Emitter Saturation Voltage, V_CE(SAT)	I_C = 10mA, I_B = 1mA	-	0.3	0.5	-	0.3	0.5	V
Base-to-Emitter Voltage, V_BE	I_C = 10mA	-	0.85	0.95	-	0.85	0.95	V
DC Forward-Current Transfer Ratio, h_FE	I_C = 10mA V_CE = 2V	40	70	-	40	70	-
Early Voltage, V_A	I_C = 1mA, V_CE = 3.5V	20	50	-	20	50	-	V
Base-to-Emitter Voltage Drift	I_C = 10mA	-	-1.5	-	-	-1.5	-	mV/^oC
Collector-to-Collector Leakage		-	1	-	-	1	-	pA

Dynamic NPN Characteristics at T_A = +25^oC

PARAMETERS	TEST CONDITIONS		DIE			SOIC		UNITS
PARAMETERS	TEST CONDITIONS	MIN	TYP	MAX	MIN	TYP	MAX	UNITS
Noise Figure	f = 1.0GHz, V_CE = 5V, I_C = 5mA, Z_S = 50Ω	-	3.5	-	-	3.5	-	dB
f_T Current Gain-Bandwidth Product	I_C = 1mA, V_CE = 5V	-	5.5	-	-	5.5	-	GHz
f_T Current Gain-Bandwidth Product	I_C = 10mA, V_CE = 5V	-	8	-	-	8	-	GHz
Power Gain-Bandwidth Product, f_MAX	I_C = 10mA, V_CE = 5V	-	6	-	-	2.5	-	GHz
Base-to-Emitter Capacitance	V_BE = -3V	-	200	-	-	500	-	fF
Collector-to-Base Capacitance	V_CB = 3V	-	200	-	-	500	-	fF

Specifications HFA3046, HFA3096, HFA3127, HFA3128

Static PNP Characteristics at T_A = +25^oC

PARAMETERS	TEST CONDITIONS		DIE			SOIC		UNITS
PARAMETERS	TEST CONDITIONS	MIN	TYP	MAX	MIN	TYP	MAX	UNITS
Collector-to-Base Breakdown Voltage, V₍BR)CBO	I_C = -100µA, I_E = 0	10	15	-	10	15	-	V
Collector-to-Emitter Breakdown Voltage, V₍BR)CEO	I_C = -100µA, I_B = 0	8	15	-	8	15	-	V
Collector-to-Emitter Breakdown Voltage, V₍BR)CES	I_C = -100µA, Base Shorted to Emitter	10	15	-	10	15	-	V
Emitter-to-Base Breakdown Voltage, V₍BR)EBO	I_E = -10µA, I_C = 0	4.5	5	-	4.5	5	-	V
Collector-Cutoff-Current, I_CEO	V_CE = -6V, I_B = 0	-	2	100	-	2	100	nA
Collector-Cutoff-Current, I_CBO	V_CB = -8V, I_E = 0	-	0.1	10	-	0.1	10	nA
Collector-to-Emitter Saturation Voltage, V_CE(SAT)	I_C = -10mA, I_B = -1mA	-	0.3	0.5	-	0.3	0.5	V
Base-to-Emitter Voltage, V_BE	I_C = -10mA	-	0.85	0.95	-	0.85	0.95	V
DC Forward-Current Transfer Ratio, h_FE	I_C = -10mA, V_CE = -2V	25	40	-	25	40	-
Early Voltage, V_A	I_C = -1mA, V_CE = -3.5V	10	25	-	10	25	-	V
Base-to-Emitter Voltage Drift	I_C = -10mA	-	-1.5	-	-	-1.5	-	mV/^oC
Collector-to-Collector Leakage		-	1	-	-	1	-	pA

Dynamic PNP Characteristics at T_A = +25^oC

PARAMETERS	TEST CONDITIONS		DIE			SOIC		UNITS
PARAMETERS	TEST CONDITIONS	MIN	TYP	MAX	MIN	TYP	MAX	UNITS
Noise Figure	f = 1.0GHz, V_CE = -5V, I_C = -5mA, Z_S = 50Ω	-	3.5	-	-	3.5	-	dB
f_T Current Gain-Bandwidth Product	I_C = -1mA, V_CE = -5V	-	2	-	-	2	-	GHz
f_T Current Gain-Bandwidth Product	I_C = -10mA, V_CE = -5V	-	5.5	-	-	5.5	-	GHz
Power Gain-Bandwidth Product	I_C = -10mA, V_CE = -5V	-	3	-	-	2	-	GHz
Base-to-Emitter Capacitance	V_BE = 3V	-	200	-	-	500	-	fF
Collector-to-Base Capacitance	V_CB = -3V	-	300	-	-	600	-	fF

Differential Pair Matching Characteristics for the HFA3046

PARAMETERS	TEST CONDITIONS		DIE			SOIC		UNITS
PARAMETERS	TEST CONDITIONS	MIN	TYP	MAX	MIN	TYP	MAX	UNITS
Input Offset Voltage	I_C = 10mA, V_CE = 5V	-	1.5	5.0	-	1.5	5.0	mV
Input Offset Current	I_C = 10mA, V_CE = 5V	-	5	25	-	5	25	µA
Input Offset Voltage TC	I_C = 10mA, V_CE = 5V	-	0.5	-	-	0.5	-	µV/^oC

S-Parameter and PSPICE model data is available from Harris Sales Offices.

Common Emitter S-Parameters of NPN 3µm x 50µm Transistor

FREQ. (Hz)	\|S11\|	PHASE(S11)	\|S12\|	PHASE(S12)	\|S21\|	PHASE(S21)	\|S22\|	PHASE(S22)
V_CE = 5V and I_C = 5mA
1.0E+08	0.83	-11.78	1.41E-02	78.88	11.07	168.57	0.97	-11.05
2.0E+08	0.79	-22.82	2.69E-02	68.63	10.51	157.89	0.93	-21.35
3.0E+08	0.73	-32.64	3.75E-02	59.58	9.75	148.44	0.86	-30.44
4.0E+08	0.67	-41.08	4.57E-02	51.90	8.91	140.36	0.79	-38.16
5.0E+08	0.61	-48.23	5.19E-02	45.50	8.10	133.56	0.73	-44.59
6.0E+08	0.55	-54.27	5.65E-02	40.21	7.35	127.88	0.67	-49.93
7.0E+08	0.50	-59.41	6.00E-02	35.82	6.69	123.10	0.62	-54.37
8.0E+08	0.46	-63.81	6.27E-02	32.15	6.11	119.04	0.57	-58.10
9.0E+08	0.42	-67.63	6.47E-02	29.07	5.61	115.57	0.53	-61.25
1.0E+09	0.39	-70.98	6.63E-02	26.45	5.17	112.55	0.50	-63.96
1.1E+09	0.36	-73.95	6.75E-02	24.19	4.79	109.91	0.47	-66.31
1.2E+09	0.34	-76.62	6.85E-02	22.24	4.45	107.57	0.45	-68.37
1.3E+09	0.32	-79.04	6.93E-02	20.53	4.15	105.47	0.43	-70.19
1.4E+09	0.30	-81.25	7.00E-02	19.02	3.89	103.57	0.41	-71.83
1.5E+09	0.28	-83.28	7.05E-02	17.69	3.66	101.84	0.40	-73.31
1.6E+09	0.27	-85.17	7.10E-02	16.49	3.45	100.26	0.39	-74.66
1.7E+09	0.25	-86.92	7.13E-02	15.41	3.27	98.79	0.38	-75.90
1.8E+09	0.24	-88.57	7.17E-02	14.43	3.10	97.43	0.37	-77.05
1.9E+09	0.23	-90.12	7.19E-02	13.54	2.94	96.15	0.36	-78.12
2.0E+09	0.22	-91.59	7.21E-02	12.73	2.80	94.95	0.35	-79.13
2.1E+09	0.21	-92.98	7.23E-02	11.98	2.68	93.81	0.35	-80.09
2.2E+09	0.20	-94.30	7.25E-02	11.29	2.56	92.73	0.34	-80.99
2.3E+09	0.20	-95.57	7.27E-02	10.64	2.45	91.70	0.34	-81.85
2.4E+09	0.19	-96.78	7.28E-02	10.05	2.35	90.72	0.33	-82.68
2.5E+09	0.18	-97.93	7.29E-02	9.49	2.26	89.78	0.33	-83.47
2.6E+09	0.18	-99.05	7.30E-02	8.96	2.18	88.87	0.33	-84.23
2.7E+09	0.17	-100.12	7.31E-02	8.47	2.10	88.00	0.33	-84.97
2.8E+09	0.17	-101.15	7.31E-02	8.01	2.02	87.15	0.33	-85.68
2.9E+09	0.16	-102.15	7.32E-02	7.57	1.96	86.33	0.33	-86.37
3.0E+09	0.16	-103.11	7.32E-02	7.16	1.89	85.54	0.33	-87.05

Common Emitter S-Parameters of NPN 3µm x 50µm Transistor (Continued)

FREQ. (Hz)	\|S11\|	PHASE(S11)	\|S12\|	PHASE(S12)	\|S21\|	PHASE(S21)	\|S22\|	PHASE(S22)
V_CE = 5V and I_C = 10mA
1.0E+08	0.72	-16.43	1.27E-02	75.41	15.12	165.22	0.95	-14.26
2.0E+08	0.67	-31.26	2.34E-02	62.89	13.90	152.04	0.88	-26.95
3.0E+08	0.60	-43.76	3.13E-02	52.58	12.39	141.18	0.79	-37.31
4.0E+08	0.53	-54.00	3.68E-02	44.50	10.92	132.57	0.70	-45.45
5.0E+08	0.47	-62.38	4.05E-02	38.23	9.62	125.78	0.63	-51.77
6.0E+08	0.42	-69.35	4.31E-02	33.34	8.53	120.37	0.57	-56.72
7.0E+08	0.37	-75.26	4.49E-02	29.47	7.62	116.00	0.51	-60.65
8.0E+08	0.34	-80.36	4.63E-02	26.37	6.86	112.39	0.47	-63.85
9.0E+08	0.31	-84.84	4.72E-02	23.84	6.22	109.36	0.44	-66.49
1.0E+09	0.29	-88.83	4.80E-02	21.75	5.69	106.77	0.41	-68.71
1.1E+09	0.27	-92.44	4.86E-02	20.00	5.23	104.51	0.39	-70.62
1.2E+09	0.25	-95.73	4.90E-02	18.52	4.83	102.53	0.37	-72.28
1.3E+09	0.24	-98.75	4.94E-02	17.25	4.49	100.75	0.35	-73.76
1.4E+09	0.22	-101.55	4.97E-02	16.15	4.19	99.16	0.34	-75.08
1.5E+09	0.21	-104.15	4.99E-02	15.19	3.93	97.70	0.33	-76.28
1.6E+09	0.20	-106.57	5.01E-02	14.34	3.70	96.36	0.32	-77.38
1.7E+09	0.20	-108.85	5.03E-02	13.60	3.49	95.12	0.31	-78.41
1.8E+09	0.19	-110.98	5.05E-02	12.94	3.30	93.96	0.31	-79.37
1.9E+09	0.18	-113.00	5.06E-02	12.34	3.13	92.87	0.30	-80.27
2.0E+09	0.18	-114.90	5.07E-02	11.81	2.98	91.85	0.30	-81.13
2.1E+09	0.17	-116.69	5.08E-02	11.33	2.84	90.87	0.30	-81.95
2.2E+09	0.17	-118.39	5.09E-02	10.89	2.72	89.94	0.29	-82.74
2.3E+09	0.16	-120.01	5.10E-02	10.50	2.60	89.06	0.29	-83.50
2.4E+09	0.16	-121.54	5.11E-02	10.13	2.49	88.21	0.29	-84.24
2.5E+09	0.16	-122.99	5.12E-02	9.80	2.39	87.39	0.29	-84.95
2.6E+09	0.15	-124.37	5.12E-02	9.49	2.30	86.60	0.29	-85.64
2.7E+09	0.15	-125.69	5.13E-02	9.21	2.22	85.83	0.29	-86.32
2.8E+09	0.15	-126.94	5.13E-02	8.95	2.14	85.09	0.29	-86.98
2.9E+09	0.15	-128.14	5.14E-02	8.71	2.06	84.36	0.29	-87.62
3.0E+09	0.14	-129.27	5.15E-02	8.49	1.99	83.66	0.29	-88.25

Common Emitter S-Parameters of PNP 3mm² x 50mm² Transistor

FREQ. (Hz)	\|S11\|	PHASE(S11)	\|S21\|	PHASE(S21)	\|S12\|	PHASE(S12)	\|S22\|	PHASE(S22)
V_CE = -5V and I_C = -5mA
1.0E+08	0.72	-16.65	10.11	166.77	1.66E-02	77.18	0.96	-10.76
2.0E+08	0.68	-32.12	9.44	154.69	3.10E-02	65.94	0.90	-20.38
3.0E+08	0.62	-45.73	8.57	144.40	4.23E-02	56.39	0.82	-28.25
4.0E+08	0.57	-57.39	7.68	135.95	5.05E-02	48.66	0.74	-34.31
5.0E+08	0.52	-67.32	6.86	129.11	5.64E-02	42.52	0.67	-38.81
6.0E+08	0.47	-75.83	6.14	123.55	6.07E-02	37.66	0.61	-42.10
7.0E+08	0.43	-83.18	5.53	118.98	6.37E-02	33.79	0.55	-44.47
8.0E+08	0.40	-89.60	5.01	115.17	6.60E-02	30.67	0.51	-46.15
9.0E+08	0.38	-95.26	4.56	111.94	6.77E-02	28.14	0.47	-47.33
1.0E+09	0.36	-100.29	4.18	109.17	6.91E-02	26.06	0.44	-48.15
1.1E+09	0.34	-104.80	3.86	106.76	7.01E-02	24.33	0.41	-48.69
1.2E+09	0.33	-108.86	3.58	104.63	7.09E-02	22.89	0.39	-49.05
1.3E+09	0.32	-112.53	3.33	102.72	7.16E-02	21.67	0.37	-49.26
1.4E+09	0.30	-115.86	3.12	101.01	7.22E-02	20.64	0.36	-49.38
1.5E+09	0.30	-118.90	2.92	99.44	7.27E-02	19.76	0.34	-49.43
1.6E+09	0.29	-121.69	2.75	98.01	7.32E-02	19.00	0.33	-49.44
1.7E+09	0.28	-124.24	2.60	96.68	7.35E-02	18.35	0.32	-49.43
1.8E+09	0.28	-126.59	2.47	95.44	7.39E-02	17.79	0.31	-49.40
1.9E+09	0.27	-128.76	2.34	94.29	7.42E-02	17.30	0.30	-49.38
2.0E+09	0.27	-130.77	2.23	93.19	7.45E-02	16.88	0.30	-49.36
2.1E+09	0.26	-132.63	2.13	92.16	7.47E-02	16.52	0.29	-49.35
2.2E+09	0.26	-134.35	2.04	91.18	7.50E-02	16.20	0.28	-49.35
2.3E+09	0.26	-135.96	1.95	90.24	7.52E-02	15.92	0.28	-49.38
2.4E+09	0.25	-137.46	1.87	89.34	7.55E-02	15.68	0.28	-49.42
2.5E+09	0.25	-138.86	1.80	88.48	7.57E-02	15.48	0.27	-49.49
2.6E+09	0.25	-140.17	1.73	87.65	7.59E-02	15.30	0.27	-49.56
2.7E+09	0.25	-141.39	1.67	86.85	7.61E-02	15.15	0.26	-49.67
2.8E+09	0.25	-142.54	1.61	86.07	7.63E-02	15.01	0.26	-49.81
2.9E+09	0.24	-143.62	1.56	85.31	7.65E-02	14.90	0.26	-49.96
3.0E+09	0.24	-144.64	1.51	84.58	7.67E-02	14.81	0.26	-50.13

Common Emitter S-Parameters of PNP 3mm² x 50mm² Transistor (Continued)

FREQ. (Hz)	\|S11\|	PHASE(S11)	\|S21\|	PHASE(S21)	\|S12\|	PHASE(S12)	\|S22\|	PHASE(S22)
V_CE = -5V, I_C = -10mA
1.0E+08	0.58	-23.24	13.03	163.45	1.43E-02	73.38	0.93	-13.46
2.0E+08	0.53	-44.07	11.75	149.11	2.58E-02	60.43	0.85	-24.76
3.0E+08	0.48	-61.50	10.25	137.78	3.38E-02	50.16	0.74	-33.10
4.0E+08	0.43	-75.73	8.88	129.12	3.90E-02	42.49	0.65	-38.83
5.0E+08	0.40	-87.36	7.72	122.49	4.25E-02	36.81	0.58	-42.63
6.0E+08	0.37	-96.94	6.78	117.33	4.48E-02	32.59	0.51	-45.07
7.0E+08	0.35	-104.92	6.01	113.22	4.64E-02	29.39	0.47	-46.60
8.0E+08	0.33	-111.64	5.39	109.85	4.76E-02	26.94	0.43	-47.49
9.0E+08	0.32	-117.36	4.87	107.05	4.85E-02	25.04	0.40	-47.97
1.0E+09	0.31	-122.27	4.44	104.66	4.92E-02	23.55	0.37	-48.18
1.1E+09	0.30	-126.51	4.07	102.59	4.97E-02	22.37	0.35	-48.20
1.2E+09	0.30	-130.21	3.76	100.76	5.02E-02	21.44	0.33	-48.11
1.3E+09	0.29	-133.46	3.49	99.14	5.06E-02	20.70	0.32	-47.95
1.4E+09	0.29	-136.33	3.25	97.67	5.09E-02	20.11	0.31	-47.77
1.5E+09	0.28	-138.89	3.05	96.33	5.12E-02	19.65	0.30	-47.58
1.6E+09	0.28	-141.17	2.87	95.10	5.15E-02	19.29	0.29	-47.39
1.7E+09	0.28	-143.21	2.70	93.96	5.18E-02	19.01	0.28	-47.23
1.8E+09	0.28	-145.06	2.56	92.90	5.21E-02	18.80	0.27	-47.09
1.9E+09	0.27	-146.73	2.43	91.90	5.23E-02	18.65	0.27	-46.98
2.0E+09	0.27	-148.26	2.31	90.95	5.26E-02	18.55	0.26	-46.91
2.1E+09	0.27	-149.65	2.20	90.05	5.28E-02	18.49	0.26	-46.87
2.2E+09	0.27	-150.92	2.10	89.20	5.30E-02	18.46	0.25	-46.87
2.3E+09	0.27	-152.10	2.01	88.37	5.33E-02	18.47	0.25	-46.90
2.4E+09	0.27	-153.18	1.93	87.59	5.35E-02	18.50	0.25	-46.97
2.5E+09	0.27	-154.17	1.86	86.82	5.38E-02	18.55	0.24	-47.07
2.6E+09	0.26	-155.10	1.79	86.09	5.40E-02	18.62	0.24	-47.18
2.7E+09	0.26	-155.96	1.72	85.38	5.42E-02	18.71	0.24	-47.34
2.8E+09	0.26	-156.76	1.66	84.68	5.45E-02	18.80	0.24	-47.55
2.9E+09	0.26	-157.51	1.60	84.01	5.47E-02	18.91	0.24	-47.76
3.0E+09	0.26	-158.21	1.55	83.35	5.50E-02	19.03	0.23	-48.00