The HGTB12N60D1C Insulated-Gate Bipolar Transistor is a MOS-gate. Polysilicon MOS Gate - Voltage Controlled Turn On/Off

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S E M I C O N D U C T O R HGTB12N60D1C

April 1995                                       12A, 600V Current Sensing N-Channel IGBT

     Features                                                                 Package

     • 12A, 600V                                                                                                 JEDEC TS-001AA (5 LEAD TO-220)

•  rDS(ON). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.27Ω       54 32

•  Low VCE(SAT) at 25A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5V (Typ)       1

•  Ultra-Fast Turn-On . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .100ns (Typ)      COLLECTOR

•  Polysilicon MOS Gate - Voltage Controlled Turn On/Off              (FLANGE)

•  High Current Handling at +100oC. . . . . . . . . . . . . . . . . . . . . . . . . . .10A

•  Current Sensing Pilot

1 - GATE

     Description                                                                               2 - SENSE

3 - COLLECTOR

The HGTB12N60D1C Insulated-Gate Bipolar Transistor is a MOS-gate                         4 - (KELVIN) EMITTER

5 - EMITTER turn on/off power switching device combining the best advantages of power MOSFETs and bipolar transistors, and current sensing pilots. The result is a device that has the high input impedance of MOSFETs and the

low on-state conduction losses similar to bipolar transistors. The device Terminal Diagram design and gate characteristics of the IGBT are also similar to power MOS- N-CHANNEL ENHANCEMENT MODE

FETs. An important difference is the equivalent rDS(ON) drain resistance C which is modulated to a low value (ten times lower) when the gate is turned on. The much lower on-state voltage drop also varies only moderately between +25oC and +150oC, offering extended power handling capability.

G

The IGBT is ideal for many high-voltage switching applications operating at E low frequencies and where low conduction losses are essential, such as

AC and DC motor controls, power supplies and drivers for solenoids, S EK relays and contactors.

PACKAGING AVAILABILITY PART NUMBER          PACKAGE              BRAND

HGTB12N60D1C                                 TS-001AA              12N60D1C

NOTE: When ordering, use the entire part number.

Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified

HGTB12N60D1C                                                                                                                                                                  UNITS

Collector-Emitter Voltage (VGE = 0V). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VCES                             600      V

Collector-Gate Voltage (RGE = 1MΩ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCGR                             600      V

Collector Current Continuous at TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC            12          A at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC            18            A Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM       40            A Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGE                   ±25         V

Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD                               75      W

Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .          0.6          W/oC Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG      -55 to +150         oC

Thermal Resistance, Junction to Case. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . RθJC                                                                                    1.67                                                                                     oC/W

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL             260       oC (1/8 inch from case for 5s)

NOTE: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Gate control turn-off not allowed above 50A.

HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:

4,364,073          4,417,385          4,430,792          4,443,931          4,466,176          4,516,143          4,532,534             4,567,641

4,587,713          4,598,461          4,605,948          4,618,872          4,620,211          4,631,564          4,639,754             4,639,762

4,641,162          4,644,637          4,682,195          4,684,413          4,694,313          4,717,679          4,743,952             4,783,690

4,794,432   4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080  4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951

4,969,027

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.  File Number 2326.3

Copyright © Harris Corporation 1995

Specifications HGTB12N60D1C

Electrical Specifications TC = +25oC, Unless Otherwise Specified

PARAMETERS

SYMBOL

TEST CONDITIONS

LIMITS

UNITS

MIN

TYP

MAX

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

BVCES

IC = 25µA, VGE = 0V

600

-

-

V

Collector Cut-Off Current

ICES

TC = +25oC, VGE = 0V,

VCE = Maximum Rating

-

-

250

µA

TC = +150oC, VGE = 0V,

VCE = Maximum Rating x 0.8 (Note 1)

-

-

4

mA

Gate-Emitter Leakage Current

IGES

VGE = ±20V

-

-

±500

nA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

VGE(TH)

VCE = VGE, IC = 250µA

TC = +25oC

2

4

5

V

TC = +150oC

-

2.5

-

V

Collector-Emitter Saturation Voltage

VCE(SAT)

VGE = 15V, IC = 10A, TC = +25oC

-

2.5

2.7

V

VGE = 15V, IC = 10A, TC = +150oC

-

2.8

-

V

VGE = 10V, IC = 10A, TC = +25oC

-

2.9

-

V

DYNAMIC CHARACTERISTICS

Input Capacitance

CIES

VGE = 0V, VCE = 25V, f = 1MHz

-

1050

-

pF

Output Capacitance

COES

-

340

-

pF

Reverse Transfer Capacitance

CRES

-

10

-

pF

SWITCHING CHARACTERISTICS (See Figures 8 and 9) (Note 2)

Turn-On Delay Time

tD(ON)

Resistive Load, TJ = +125oC,

IC = 10A, VCE = 500V, VGE = 15V,

RG(ON) = 50Ω, RG(OFF) = 100Ω

-

100

-

ns

Rise Time

tR

-

100

-

ns

Turn-Off Delay Time

tD(OFF)

-

0.4

-

µs

Fall Time

tF

-

2.5

-

µs

Turn-Off Delay Time

tD(OFF)I

Inductive Load, TJ = +125oC,

L = 45µH, IC = 10A, VCE(CLAMP) = 500V,

VGE = 15V, RG(ON) = 50Ω,

RG(OFF) = 100Ω

-

0.8

1.2

µs

Fall Time

tFI

-

0.8

1.0

µs

Equivalent Fall Time

tF(EQ)

-

0.6

0.8

µs

Turn-Off Switching Losses

WOFF

-

1.6

2.0

mJ

PILOT CHARACTERISTICS (Notes 2, 3 and 4)

Pilot-Emitter Kelvin Voltage

VPEK

VGE = 15VDC, RP = 2kΩ

IC = 5A

-

1.25

-

V

IC = 10A

1.4

1.67

1.8

V

IC = 20A

-

2.06

-

V

NOTES:

1.  Applies for 3.3 oC per watt maximum thermal resistance, case-to-ambient.

2.  Pulse test: Pulse widths ≤ 300µs, duty cycle ≤ 2%.

3.  Refer to Figure 10.

4.  When not in use connect S to emitter.

HGTB12N60D1C

Typical Performance Curves

FIGURE 1. TYPICAL OUTPUT CHARACTERISTICS                                      FIGURE 2. TYPICAL COLLECTOR-EMITTER SATURATION VOLTAGE

FIGURE 3. MAXIMUM ALLOWABLE CASE TEMPERATURE vs FIGURE 4. TYPICAL TEMPERATURE DEPENDENCE OF DC COLLECTOR CURRENT          PARAMETERS


5                                 10                                 20                                30

ICE, EMITTER CURRENT (A)

FIGURE 5. TYPICAL EMITTER PILOT CHARACTERISTICS 2kΩ PILOT RESISTOR

0               100            200            300            400              500

VCE, COLLECTOR-EMITTER VOLTAGE (V)

FIGURE 6. TURN-OFF SAFE OPERATING AREA


HGTB12N60D1C

Typical Performance Curves(Continued)

FIGURE 7. TURN-ON SAFE OPERATING AREA                    FIGURE 8. MAXIMUM TRANSIENT THERMAL IMPEDANCE

Test Circuits and Waveforms

RG(ON) =      (RGEN + RS)(RGE)    PULSE WIDTH 60µs VCC                                                                       RESISTIVE LOAD           INDUCTIVE

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