The HGTB12N60D1C Insulated-Gate Bipolar Transistor is a MOS-gate. Polysilicon MOS Gate - Voltage Controlled Turn On/Off

S E M I C O N D U C T O R HGTB12N60D1C

April 1995                                       12A, 600V Current Sensing N-Channel IGBT

     Features                                                                 Package

     • 12A, 600V                                                                                                 JEDEC TS-001AA (5 LEAD TO-220)

•  r_DS(ON). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.27Ω       ⁵4 ₃₂

•  Low V_CE(SAT) at 25A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5V (Typ)       ¹

•  Ultra-Fast Turn-On . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .100ns (Typ)      _COLLECTOR

•  Polysilicon MOS Gate - Voltage Controlled Turn On/Off              ^(FLANGE)

•  High Current Handling at +100^oC. . . . . . . . . . . . . . . . . . . . . . . . . . .10A

•  Current Sensing Pilot

1 - GATE

     Description                                                                               2 - SENSE

3 - COLLECTOR

The HGTB12N60D1C Insulated-Gate Bipolar Transistor is a MOS-gate                         4 - (KELVIN) EMITTER

5 - EMITTER turn on/off power switching device combining the best advantages of power MOSFETs and bipolar transistors, and current sensing pilots. The result is a device that has the high input impedance of MOSFETs and the

low on-state conduction losses similar to bipolar transistors. The device Terminal Diagram design and gate characteristics of the IGBT are also similar to power MOS- N-CHANNEL ENHANCEMENT MODE

FETs. An important difference is the equivalent r_DS(ON) drain resistance _C which is modulated to a low value (ten times lower) when the gate is turned on. The much lower on-state voltage drop also varies only moderately between +25^oC and +150^oC, offering extended power handling capability.

G

The IGBT is ideal for many high-voltage switching applications operating at E low frequencies and where low conduction losses are essential, such as

AC and DC motor controls, power supplies and drivers for solenoids, _{S E}K relays and contactors.

PACKAGING AVAILABILITY PART NUMBER          PACKAGE              BRAND

HGTB12N60D1C                                 TS-001AA              12N60D1C

NOTE: When ordering, use the entire part number.

Absolute Maximum Ratings T_C = +25^oC, Unless Otherwise Specified

HGTB12N60D1C                                                                                                                                                                  UNITS

Collector-Emitter Voltage (V_GE = 0V). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_CES                             600      V

Collector-Gate Voltage (R_GE = 1MΩ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_CGR                             600      V

Collector Current Continuous at T_C ^{= +100o}C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C            12          A at T_C ^{= +25o}C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C            18            A Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_CM       40            A Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GE                   ±25         V

Power Dissipation Total at T_C ^{= +25o}C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D                               75      W

Power Dissipation Derating T_C > +25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .          0.6          W/^oC Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . .T_J, T_STG      -55 to ^{+150         o}C

Thermal Resistance, Junction to Case. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Rθ_JC                                                                                    ^{1.67                                                                                     o}C/W

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_L             260       ^oC (1/8 inch from case for 5s)

NOTE: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Gate control turn-off not allowed above 50A.

HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:

4,364,073          4,417,385          4,430,792          4,443,931          4,466,176          4,516,143          4,532,534             4,567,641

4,587,713          4,598,461          4,605,948          4,618,872          4,620,211          4,631,564          4,639,754             4,639,762

4,641,162          4,644,637          4,682,195          4,684,413          4,694,313          4,717,679          4,743,952             4,783,690

4,794,432   4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080  4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951

4,969,027

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.  File Number 2326.3

Copyright © Harris Corporation 1995

Specifications HGTB12N60D1C

Electrical Specifications T_C = +25^oC, Unless Otherwise Specified

PARAMETERS	SYMBOL	TEST CONDITIONS			LIMITS		UNITS
				MIN	TYP	MAX
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage	BVCES	IC = 25µA, VGE = 0V		600	-	-	V
Collector Cut-Off Current	ICES	TC = +25oC, VGE = 0V, VCE = Maximum Rating		-	-	250	µA
		TC = +150oC, VGE = 0V, VCE = Maximum Rating x 0.8 (Note 1)		-	-	4	mA
Gate-Emitter Leakage Current	IGES	VGE = ±20V		-	-	±500	nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage	VGE(TH)	VCE = VGE, IC = 250µA	TC = +25oC	2	4	5	V
			TC = +150oC	-	2.5	-	V
Collector-Emitter Saturation Voltage	VCE(SAT)	VGE = 15V, IC = 10A, TC = +25oC		-	2.5	2.7	V
		VGE = 15V, IC = 10A, TC = +150oC		-	2.8	-	V
		VGE = 10V, IC = 10A, TC = +25oC		-	2.9	-	V
DYNAMIC CHARACTERISTICS
Input Capacitance	CIES	VGE = 0V, VCE = 25V, f = 1MHz		-	1050	-	pF
Output Capacitance	COES			-	340	-	pF
Reverse Transfer Capacitance	CRES			-	10	-	pF
SWITCHING CHARACTERISTICS (See Figures 8 and 9) (Note 2)
Turn-On Delay Time	tD(ON)	Resistive Load, TJ = +125oC, IC = 10A, VCE = 500V, VGE = 15V, RG(ON) = 50Ω, RG(OFF) = 100Ω		-	100	-	ns
Rise Time	tR			-	100	-	ns
Turn-Off Delay Time	tD(OFF)			-	0.4	-	µs
Fall Time	tF			-	2.5	-	µs
Turn-Off Delay Time	tD(OFF)I	Inductive Load, TJ = +125oC, L = 45µH, IC = 10A, VCE(CLAMP) = 500V, VGE = 15V, RG(ON) = 50Ω, RG(OFF) = 100Ω		-	0.8	1.2	µs
Fall Time	tFI			-	0.8	1.0	µs
Equivalent Fall Time	tF(EQ)			-	0.6	0.8	µs
Turn-Off Switching Losses	WOFF			-	1.6	2.0	mJ
PILOT CHARACTERISTICS (Notes 2, 3 and 4)
Pilot-Emitter Kelvin Voltage	VPEK	VGE = 15VDC, RP = 2kΩ
IC = 5A				-	1.25	-	V
IC = 10A				1.4	1.67	1.8	V
IC = 20A				-	2.06	-	V

NOTES:

1.  Applies for 3.3 ^oC per watt maximum thermal resistance, case-to-ambient.

2.  Pulse test: Pulse widths ≤ 300µs, duty cycle ≤ 2%.

3.  Refer to Figure 10.

4.  When not in use connect S to emitter.

HGTB12N60D1C

Typical Performance Curves

FIGURE 1. TYPICAL OUTPUT CHARACTERISTICS                                      FIGURE 2. TYPICAL COLLECTOR-EMITTER SATURATION VOLTAGE

FIGURE 3. MAXIMUM ALLOWABLE CASE TEMPERATURE vs FIGURE 4. TYPICAL TEMPERATURE DEPENDENCE OF DC COLLECTOR CURRENT          PARAMETERS