High Frequency N-P-N Transistor Array. Multifunction Combinations - RF/Mixer/Oscillator. Specifications CA3127

Features                                                       Description

•  Gain Bandwidth Product (f_T). . . . . . . . . . . . . . . . >1GHz The CA3127* consists of five general purpose silicon n-p-n transistors on a common monolithic substrate. Each of the

•  Power Gain. . . . . . . . . . . . . . . . . 30dB (Typ) at 100MHzcompletely isolated transistors exhibits low 1/f noise and a

•  Noise Figure. . . . . . . . . . . . . . . . 3.5dB (Typ) at 100MHz     value of f_T in excess of 1GHz, making the CA3127 useful from DC to 500MHz. Access is provided to each of the termi•  Five Independent Transistors on a Common Substrate nals for the individual transistors and a separate substrate connection has been provided for maximum application flexiApplications bility. The monolithic construction of the CA3127 provides close electrical and thermal matching of the five transistors.

•  VHF Amplifiers

*  Formerly Development Number TA6206.

•  Multifunction Combinations - RF/Mixer/Oscillator

•  Sense Amplifiers           Ordering Information

•  Synchronous Detectors

•  VHF Mixers

•  IF Converter

•  IF Amplifiers

•  Synthesizers

•  Cascade Amplifiers

*  Denotes Tape and Reel.

Pinout

CA3127

(PDIP, CDIP, 150MIL SOIC)

TOP VIEW

Absolute Maximum Ratings

Operating Conditions

Power Dissipation, P_D

Any One Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85mW

Operating Temperature Range . . . . . . . . . . . . . . . . -55^oC to +125^oC

Storage Temperature Range. . . . . . . . . . . . . . . . . . -65^oC to +150^oC

PARAMETERS

TEST CONDITIONS

LIMITS

UNITS

MIN

TYP

MAX

DC SPECIFICATIONS (For Each Transistor)

Collector-to-Base Breakdown Voltage

I_C = 10µA, I_E = 0

20

32

-

V

Collector-to-Emitter Breakdown Voltage

I_C = 1mA, I_B = 0

15

24

-

V

Collector-to-Substrate Breakdown-Voltage

I_C1 = 10µA, I_B = 0, I_E = 0

20

60

-

V

Emitter-to-Base Breakdown Voltage (Note 2)

I_E = 10µA, I_C = 0

4

5.7

-

V

Collector-Cutoff-Current

V_CE = 10V I_B = 0

-

-

0.5

µA

Collector-Cutoff-Current

V_CB = 10V, I_E = 0

-

-

40

nA

DC Forward-Current Transfer Ratio

V_CE = 6V

I_C = 5mA

35

88

-

I_C = 1mA

40

90

-

I_C = 0.1mA

35

85

-

Base-to-Emitter Voltage

V_CE = 6V

I_C = 5mA

0.71

0.81

0.91

V

I_C = 1mA

0.66

0.76

0.86

V

I_C = 0.1mA

0.60

0.70

0.80

V

Collector-to-Emitter Saturation Voltage

I_C = 10mA, I_B = 1mA

-

0.26

0.50

V

Magnitude of Difference in V_BE

Q₁ & Q₂ Matched V_CE = 6V, I_C = 1mA

-

0.5

5

mV

Magnitude of Difference in I_B

-

0.2

3

µA

SWITCHING SPECIFICATIONS

Noise Figure

f = 100kHz, R_S = 500Ω, I_C = 1mA

-

2.2

-

dB

Gain-Bandwidth Product

V_CE = 6V, I_C = 5mA

-

1.15

-

GHz

Collector-to-Base Capacitance

V_CB = 6V, f = 1MHz

-

See

Fig. 5

-

pF

Collector-to-Substrate Capacitance

V_CI = 6V, f = 1MHz

-

-

pF

Emitter-to-Base Capacitance

V_BE = 4V, f = 1MHz

-

-

pF

Voltage Gain

V_CE = 6V, f = 10MHz, R_L = 1kΩ, I_C = 1mA

-

28

-

dB

Power Gain

Cascode Configuration f = 100MHz, V+ = 12V, I_C = 1mA

27

30

-

dB

Noise Figure

-

3.5

-

dB

Input Resistance

Common-Emitter Configuration

V_CE = 6V, I_C = 1mA, f = 200 MHz

-

400

-

Ω

Output Resistance

-

4.6

-

kΩ

Input Capacitance

-

3.7

-

pF

Output Capacitance

-

2

-

pF

Magnitude of Forward Transadmittance

-

24

-

mmho

TRAN-

SISTOR

CAPACITANCE (pF)

CCB

CCE

CEB

CCI

PKG

TOTAL

PKG

TOTAL

PKG

TOTAL

PKG

TOTAL

BIAS

(V)

-

6V

-

6V

-

4V

-

6V

Q1

0.025

0.190

0.090

0.125

0.365

0.610

0.475

1.65

Q2

0.015

0.170

0.225

0.265

0.130

0.360

0.085

1.35

Q3

0.040

0.200

0.215

0.240

0.360

0.625

0.210

1.40

Q4

0.040

0.190

0.225

0.270

0.365

0.610

0.085

1.25

Q5

0.010

0.165

0.095

0.115

0.140

0.365

0.090

1.35