Библиография по ИПТ

Страницы работы

Фрагмент текста работы

1.  .Гуревич А. В., Питаевский Л. П. Коэффициент рекомбинации в плотной низкотемпературной плазме.— ЖЭТФ, 1964, т. 46, № 4, с. 1281—1284.

2.  .Измайлов С. В. К термической теории испускания электронов под влиянием удара быстрых ионов.— ЖЭТФ, 1939, т. 9, вып. 12, с. 1473—1484.

3.  Abe H. The application of gas plasma to the fabrication MOS LSI.— J. Jap. Appl. Phys., 1975, vol. 44, N 2, p. 287—295.

4.  Abe H. The present and future aspect of dry process in semiconductor device manufacture. 3'eme Table ronde Int. Symp. inf. chim. .plasmas Limoges, 1977, «eonf. invites Limoges», 1977 RT 5/1—RT 5/10.

5.  Abe H., Sonobe G., Enotrloto T. Etching Characteristics of silicon and its Compounds by Gas Plasma. — J. Jap. Appl. Phys., 1973, vol. 12, N 1, p. 154— 158.

6.  Abe H., Sonobe G., Enotrloto T. Etching Characteristics of silicon and its Compounds by Gas Plasma. — J. Jap. Appl. Phys., 1973, vol. 12, N 1, p. 154 — 158.

7.  Adir .Jacob. The versatile tpchnique of r. f. plasma etching. — Solid State Techn., 1976, vol. 20, N 8, p. 31—36.

8.  Adir Jacob. The versatile technique of r. f. plasma etching. — Solid State Techn., 1978, vol. 21, N 4, p. 95—98.

9.  Adir Jacob. The versatile technique of r. f. plasma etching. — Solid State Techn., 1976, vol. 19, N 9, p. 70—73.

10.  Alexis T. Bell. An introduction to plasma processing. — Solid State Techn., 1978, vol. 20, N 4, p. 89—94.

11.  Alexis T. Bell. The principles of plasma chemistry.—Techn. and Appl Plasma Chemistry. New York, 1974, p. 1—56.

12.  Ambridge Т., Bayly A. R., Erents K., Carter C. Inert gas ion trappings and thermal release from titanium.—Vacuum, 1967, vol. 17, N 6, p. 329—330.

13.  An experimental study of turbulent premixed flame/ T. Suzuki, H. Oba, T. Hirano, H. Tsuji//Bulletin JSME. 1979. Vol. 22, N 167. P. 848—856.

14.  Andersen H. H. The Depth Resolution of Sputter Profiling. — Appl. Phys., 1979, vol. 18, p. 131—140.

15.  Andersen N., Sigmund P. Energy dissipation by heavy ions in compound targets.—Kgl. Dan Vid Selsk. Matt-Fys. Medd., 1974, vol. 39, N 3, p. 3—44.

16.  Anderson G. S. Temperature dependence of the Ag/Cu Sputtering ratio for the Eutectic— J. Appl. Phys., 1969, vol. 40, N 7, p. 2884—2888.

17.  Apps R. L. The Significance of Surface Preparation in the Flame Spraying of Metals//The Chemical Engineer. 1974. N 292. P. 769—773.

18.  Aronson Arnold. Equipment for sputtering.— Solid'State Techn., 1978, vol. 21, N 12, p. 66—72.

19.  Asmussen S., Mallavarpu. Hammon J., Park H. The design of a microwave plasma cavity Proc.— IEEE, 1974, N 1, p. 109—117.

20.  Auciello O. // Rad. Eff., 1982, V. 60

21.  Automated flamespraying processes. Metco Inc. Bulletin 0183.

22.  Automatic aluminium plasma etching.— Solid State Techn., 1977, vol. 20, N 5, p. 74.

23.  Babat C. J. Electrodeless discharges and some applied problems — J. Inst. Elect. Eng., 1947, vol. 94, p. 27—37.

24.  Bates D. R. Electron recombination in Helium — Phys. Rev, 1950, vol. 77, N 5, p. 718—719.

25.  Bates D. R., Massey H. S. Slow inelastic collisions between atomic systems —Phil. Mag., 1954, vol. 45, N 361, p. 111—122.

26.  Bates D. R., Massey H. S. Slow inelastic collisions between atomic systems —Phil. Mag., 1954, vol. 45, N 361, p. 111—122.

27.  Berg R. S., Kominak G. I. Surface texturing by sputter etching.— J. Vac. Sci. and Techn, 1976, vol. 13, N 1, p. 403—406

28.  Bersin R. L. Automatic plasma machines for stripping photoresist.— Solid State Techn., 1976, vol. 13, N 6, p. 39—45.

29.  Bersin R. L. Chemically selective anisotropic plasma etching.— Solid State Techn., 1978, vol. 21, N 4, p. 117—121.

30.  Bersin R. L. Plasma etching of thin metal and dielectric films.— J. Vac. Sci. and Techn., 1976, vol. 13, N 1, p. 169.

31.  Bersin R. L. Survey of plasma etching processes,—Solid State Techn., 1976, vol. 19, N 5, p. 31—36.

32.  Bichot В. Aspects techniques du netajage et de la preparation de surface par grenaillage // Galvano-Organo. 1975. Vol. 44, N 460. P. 955—961.

33.  Bick H., Jurgens W. Advanced high velocity thermal spraying of metallic and ceramic powders // «DUS—BER». 1983. Vol. 80. P. 42—45.

34.  Bielski A., Kozlowzky T. Semi-empirical formula for the cross-section for excitation of atoms by electronic collisions.— Acta Phys. polon., 1965, vol. 28, N 4, p. 555—558.

35.  Biersack J.P., Eckstein W. // Appl. Phys, 1984, V. A34

36.  Bliton S. L., Reenter H. L. Determination of physical properties of flamesprayed ceramic coatings // Amer. Ceram. Soc. Bull. 1961. Vol. 40, N 11. P. 683—688.

37.  Boedeker G., Haldeman P. Some experimental data by Non-equilibrium r. f. discharges.—AIAA J., 1968, vol. 1, N 6, p. 3—8.

38.  Boehnke R. D. The application of ion etching and control.—Vac. Techn., 1976, vol. 25, N 7, p. 195—199.

39.  Bollinger L. D. Ion milling for semiconductor production processes.— Solid State Techn., 1977, vol. 20, N 11, p. 66—70.

40.  Bondur J. A. Dry process technology (Reactive ion etching).—J. Vac. Sci. and Techn., 1976, vol. 13, N 5, p. 1023—1029.

41.  Bondur J. A., Clark H. A. Plasma etching for Si02 profile control.— Solid State Techn., 1980, vol. 23, N 4, p. 123—127.

42.  Borbek K- D. Robotics and manipulators for automated plasma spraying and vacuum prasma spraying // 10th International Thermal Spraying Conference. Essen, 2—6 May 1983. P. 99—104.

43.  Boulunger P., LeClerk J., Mourier G. Une source d'ions de basse energie a flux eleve chouffee en hyper-frequences.— Revue de physique appliquee, 1977, vol. 12, N 10, p. 1655—1661.

44.  Braun P., Faber W., Betz G., Vlehbock F. P. Effects in Auger electron spectroscopy due to the probing electrons and sputtering.—Vacuum, 1977, vol. 27, N 3, p. 103—108.

45.  Brenier M., Tueta R. Supersonic and arc plazma spraying apparatus characteristics and application to metallic coatings // 9th International Thermal Spraying Conference. The Hague. 19—23 May 1980. P. 167—172.

46.  Brown F., Davies F. A. The effect of energy and integrated flux on the retention and range of inert gas ions injected at K.EV energies in metals.— Canad. J. Phys., 1963, vol. 41, N 6, p. 844—857.

47.  Bugaev S. P., Chun H.-G., Oskomov K. V., Sochugov N.S., Zakharov A. N.. Amorphous hydrogenated carbon films deposited by closed-drift ion source// Laser and Particle Beams. - 2003. - Vol. 21 - p. 285-289.

48.  Bugaev S. P., Oskomov K. V., Sochugov N. S., Solovjev A. A., Zakharov A. N.. Iimprovement of Coating Deposition and Target Erosion Uniformity in Rotating Cylindrical Magnetrons.// Laser and Particle Beams. - 2003. - Vol. 21 - p. 279-283.

49.  Bugaev S. P., Sochugov N.S., Kovsharov N. F., Ladyzhensky O. B. An Experience of Low-E Glass Production on the "VNUK" Series Batch Type Coaters.// Proc. of 4th International Conference on Plasma Physics and Plasma Technology.- Minsk, Byelorussia, September 16-19, 2003, p.443-446.

50.  Bugaev S.P., Chun Hui-Gon, Oskomov K.V., Kozyrev A.V., Sochugov N.S., You Yong-Zoo, Lee Jing-Hyuk. Characterization of a a-C:H Films Deposited on Dielectric Substrates by Atmospheric Pressure Surface Spark Discharge. New Diamond and Frontier Carbon Technology, Vol. 13, No4, 2003. p. 207-220.

51.  Bugaev S.P., Oskomov K.V., Sochugov N.S.. Deposition of highly adhesive amorphous carbon films with the use of preliminary plasma - immersion ion implantation.// Surface and Coating Technology. -2002. - 156/1-3, p.311-316.

52.  Bugaev S.P., Sochugov N.S., Zakharov A.N., Oskomov K.V., Solovjev A.A..Rotating Cylindrical Magnetrons and Accelerators with Anode Layer for Large - Area Film Deposition Technologies.// Proc. of 11th International Congress on Plasma Physics.- Sydney, Australia, July 15-19, 2002, p. 373 - 376.

53.  Bunshah R. F., Juntz R. S. The influence of ion bombardment on the microstructure of thick deposits produced by high rate physical vapor deposition processes.—J. Vac. Sci and Techn., 1972, vol. 9, N 6, p. 1404—1408.

54.  Burtt R. В., Colligon S. S., Leek J. H. Sorption and replacemect of Ionized noble gases at a tungsten surface.— Brit. J. Appl. Phys., 1961, vol. 12, N 8, p. 396—400.

55.  By Pashly D. W. The nucleation, growth, structure and epitaxy of Thin surface films.—Adv. Phys., 1965, vol. 14, N 55, p. 327—416.

56.  Cabannes F. Etude de la discharge electroque par inductidons les gaz rares.—Ann. Phys., 1955, vol. 10, p. 1026—1078.

57.  Cantagrel M. Consideration on high resolution patterns engraved by ion etching.— IEEE, Trans. Electron Device, 1975, vol. 22, N 7, p. 483—486.

58.  Carter C., Navinsek B., Whitton J.L. Sputtering by Particles Bombardment. 2 ed. R. Bherish, Springer Verl., 1983

59.  Castellano R. N. Reactive sputter etching of thin films for pattern delineation.— IEEE Trans. Compon. Hybrids and Manuf. Techn., 1978, vol. 1, N 4, p. 397—399.

60.  Castellano R. N., Notts M. R., Simmons G. W. Composition and stress state of thin films deposited by ion beam sputtering.—Vacuum, 1977, vol. 27, N 3, p. 109—117.

61.  CDS — The quality approach to coating solutions using high velocity

Похожие материалы

Информация о работе